Semiconductor-Plating
Re-wiring / bump plating service to WLP (wafer level package)
We will correspond to each wafer size.
We also correspond to Cu pillar, solder bump, low melting point bump, various bumps.
We will assist you with small number of wafers, small lot and short delivery time response.
An example of each process
|
No. |
process |
Specification range |
| 1 | Seed layer forming |
Ti + Cu film forming |
| 2 |
Circuit forming (Resist lithography) |
Resist type : positive, negative Maximum L & S : 100um Thickness : 100um Minimum L & S : 10um Thickness 10um |
|
3 |
Circuit forming (Electro Cu plating) |
|
| 4 |
Resist/seed layer stripping |
|
| 5 |
Insulation resin forming |
Insulating resin : polyimide, phenol type etc. Maximum diameter : φ250um Thickness : 20um Minimum diameter : φ10um Thickness : 5um |
| 6 |
Seed layer forming |
|
| 7 |
Post forming (Resist lithography) |
Resist type : positive, negative type Maximum diameter : φ250um Thickness : 150um Minimum diameter : φ10um Thickness : 10um |
| 8 |
Cu post-plating |
|
| 9 |
Ni barrier plating |
Thickness : 2um～ |
|
10 |
SnAg plating |
Thickness : 3um～ ※SnBi、In plating available |
|
11 |
Resist/seed layer stripping |
|
|
12 |
Flux coating |
|
|
13 |
Reflow treatment |
By wafer dedicated reflow machine |
|
14 |
Cleaning |
